Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
- Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
- Schubert, MF; Xu, J; Kim, JK; Schubert, EF; Kim, MH; Yoon, S; Lee, SM; Sone, C; Sakong, T; Park, Y
- Date Issued
- AMER INST PHYSICS
- Blue multi-quantum-well light-emitting diodes (LEDs) with GaInN quantum wells and polarization-matched AlGaInN barriers are grown by metal-organic chemical vapor deposition. The use of quaternary alloys enables an independent control over interface polarization charges and bandgap and has been suggested as a method to reduce electron leakage from the active region, a carrier loss mechanism that can reduce efficiency at high injection currents-an effect known as the efficiency droop. The GaInN/AlGaInN LEDs show reduced forward voltage, reduced efficiency droop, and improved light-output power at large currents compared to conventional GaInN/GaN LEDs. (c) 2008 American Institute of Physics.
- Article Type
- APPLIED PHYSICS LETTERS, vol. 93, no. 4, 2008-07-28
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