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Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop SCIE SCOPUS

Title
Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
Authors
Schubert, MFXu, JKim, JKSchubert, EFKim, MHYoon, SLee, SMSone, CSakong, TPark, Y
Date Issued
2008-07-28
Publisher
AMER INST PHYSICS
Abstract
Blue multi-quantum-well light-emitting diodes (LEDs) with GaInN quantum wells and polarization-matched AlGaInN barriers are grown by metal-organic chemical vapor deposition. The use of quaternary alloys enables an independent control over interface polarization charges and bandgap and has been suggested as a method to reduce electron leakage from the active region, a carrier loss mechanism that can reduce efficiency at high injection currents-an effect known as the efficiency droop. The GaInN/AlGaInN LEDs show reduced forward voltage, reduced efficiency droop, and improved light-output power at large currents compared to conventional GaInN/GaN LEDs. (c) 2008 American Institute of Physics.
URI
https://oasis.postech.ac.kr/handle/2014.oak/9614
DOI
10.1063/1.2963029
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 93, no. 4, 2008-07-28
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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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