Open Access System for Information Sharing

Login Library

 

Article
Cited 23 time in webofscience Cited 22 time in scopus
Metadata Downloads

Direct Growth of Highly Stable Patterned Graphene on Dielectric Insulators using a Surface-Adhered Solid Carbon Source SCIE SCOPUS

Title
Direct Growth of Highly Stable Patterned Graphene on Dielectric Insulators using a Surface-Adhered Solid Carbon Source
Authors
Lee, EunhoLee, Seung GooLEE, HYOCHANJo, MankyuYoo, Min SeokCho, Kilwon
Date Issued
2018-04
Publisher
WILEY-V C H VERLAG GMBH
Abstract
A novel method is described for the direct growth of patterned graphene on dielectric substrates by chemical vapor deposition (CVD) in the presence of Cu vapor and using a solid aromatic carbon source, 1,2,3,4-tetraphenylnapthalene (TPN), as the precursor. The UV/O-3 treatment of the TPN film both crosslinks TPN and results in a strong interaction between the substrate and the TPN that prevents complete sublimation of the carbon source from the substrate during CVD. Substrate-adhered crosslinked TPN is successfully converted to graphene on the substrate without any organic contamination. The graphene synthesized by this method shows excellent mechanical and chemical stability. This process also enables the simultaneous patterning of graphene materials, which can thus be used as transparent electrodes for electronic devices. The proposed method for the synthesis directly on substrates of patterned graphene is expected to have wide applications in organic and soft hybrid electronics.
URI
https://oasis.postech.ac.kr/handle/2014.oak/95919
DOI
10.1002/adma.201706569
ISSN
0935-9648
Article Type
Article
Citation
ADVANCED MATERIALS, vol. 30, no. 15, 2018-04
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

조길원CHO, KIL WON
Dept. of Chemical Enginrg
Read more

Views & Downloads

Browse