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Cited 193 time in webofscience Cited 222 time in scopus
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dc.contributor.authorKim, JS-
dc.contributor.authorPark, JH-
dc.contributor.authorLee, JH-
dc.contributor.authorJo, J-
dc.contributor.authorKim, DY-
dc.contributor.authorCho, K-
dc.date.accessioned2015-06-25T01:17:42Z-
dc.date.available2015-06-25T01:17:42Z-
dc.date.created2009-08-25-
dc.date.issued2007-09-10-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000007160en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9582-
dc.description.abstractIndium tin oxide (ITO) substrates modified with self-assembled monolayers (SAMs) were used to control the anode work function and active layer morphology of organic solar cells based on poly(3-hexylthiophene)/[6:6]-phenyl-C61 butyric acid methyl ester heterojunctions. By using SAMs with the terminal groups -NH2, -CH3, and -CF3, the authors were able to control the hole injection barrier of the ITO closer to the highest occupied molecular orbital level of active layer and surface energy of the ITO substrate. A solar cell device with CF3 SAM treated ITO was found to exhibit high efficiency performance, about 3.15%.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleControl of the electrode work function and active layer morphology via surface modification of indium tin oxide for high efficiency organic photovoltaics-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1063/1.2778548-
dc.author.googleKim, JSen_US
dc.author.googlePark, JHen_US
dc.author.googleCho, Ken_US
dc.author.googleKim, DYen_US
dc.author.googleJo, Jen_US
dc.author.googleLee, JHen_US
dc.relation.volume91en_US
dc.relation.issue11en_US
dc.relation.startpage112111en_US
dc.relation.lastpage112111en_US
dc.contributor.id10077904en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.91, no.11, pp.112111 - 112111-
dc.identifier.wosid000249474000048-
dc.date.tcdate2019-01-01-
dc.citation.endPage112111-
dc.citation.number11-
dc.citation.startPage112111-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume91-
dc.contributor.affiliatedAuthorCho, K-
dc.identifier.scopusid2-s2.0-34548666638-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc163-
dc.description.scptc182*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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