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Cited 51 time in webofscience Cited 52 time in scopus
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dc.contributor.authorAn, SJko
dc.contributor.authorYi, GCko
dc.date.accessioned2015-06-25T01:17:39Z-
dc.date.available2015-06-25T01:17:39Z-
dc.date.created2009-02-28-
dc.date.issued2007-01-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.91, no.12-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000007180en_US
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/9581-
dc.description.abstractThe authors report on the fabrication and characteristics of near ultraviolet nanorod light emitting diodes (LEDs) composed of n-GaN/ZnO nanorod heterostructures on p-GaN substrates. The nanorod LEDs consist of the vertically aligned n-GaN/ZnO coaxial nanorod arrays grown on a p-GaN substrate. The LEDs demonstrated strong near ultraviolet emission at room temperature. The nanorod LEDs were turned on a forward-bias voltage of 5 V, and exhibited a large light emitting area. From electroluminescent spectra, dominant emission peaks were observed at 2.96 and 3.24 eV for an applied current of 2 mA. The origins of the strong and large area light emission are also discussed in terms of enhanced carrier injection from n-GaN nanostructures to p-GaN substrates.en_US
dc.description.statementofresponsibilityopenen_US
dc.format.extentpdfen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleNear ultraviolet light emitting diode composed of n-GaN/ZnO coaxial nanorod heterostructures on a p-GaN layer-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.2786852-
dc.author.googleAn, Sung Jinen_US
dc.author.googleYi, Gyu-Chulen_US
dc.relation.volume91en_US
dc.relation.issue12en_US
dc.publisher.locationUSen_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.contributor.localauthorYi, GC-
dc.contributor.nonIdAuthorAn, SJ-
dc.identifier.wosid000249667200097-
dc.date.tcdate2019-01-01-
dc.citation.number12-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume91-
dc.identifier.scopusid2-s2.0-34648812740-
dc.description.journalClass1-
dc.description.wostc41-
dc.description.scptc48*
dc.date.scptcdate2018-10-274*

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이규철YI, GYU CHUL
Dept of Materials Science & Enginrg
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