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Molecular orientation dependence of hole-injection barrier in pentacene thin film on the Au surface in organic thin film transistor SCIE SCOPUS

Title
Molecular orientation dependence of hole-injection barrier in pentacene thin film on the Au surface in organic thin film transistor
Authors
Ihm, KKim, BKang, THKim, KJJoo, MHKim, THYoon, SSChung, S
Date Issued
2006-07-17
Publisher
AMER INST PHYSICS
Abstract
We have investigated the effects of a buffer layer insertion on the performance of the pentacene based thin film transistor with a bottom contact structure. When the pentacene molecules have a standing up coordination on the Au surface that is modified by the benzenethiol or methanethiol, the transition region in the pentacene thin film is removed along the boundary between the Au and silicon oxide region, and the hole-injection barrier decreases by 0.4 eV. Pentacene on various surfaces showed that the highly occupied molecular level is 0.2-0.4 eV lower in the standing up coordination than in the lying down coordination. (c) 2006 American Institute of Physics.
URI
https://oasis.postech.ac.kr/handle/2014.oak/9533
DOI
10.1063/1.2227712
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 89, no. 3, 2006-07-17
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