Low-operating-voltage pentacene field-effect transistor with a high-dielectric-constant polymeric gate dielectric
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SCOPUS
- Title
- Low-operating-voltage pentacene field-effect transistor with a high-dielectric-constant polymeric gate dielectric
- Authors
- Kim, SH; Yang, SY; Shin, K; Jeon, H; Lee, JW; Hong, KP; Park, CE
- Date Issued
- 2006-10-30
- Publisher
- AMER INST PHYSICS
- Abstract
- Low-operating-voltage organic field-effect transistor has been realized by using the cross-linked cyanoethylated poly(vinyl alcohol) (CR-V) as a gate dielectric. The cross-linked CR-V dielectric was found to have a high dielectric constant of 12.6 and good insulating properties, resulting in a high capacitance (92.9 nF/cm(2) at 20 Hz) for a dielectric thickness of 120 nm. A pentacene field-effect transistor fabricated with the cross-linked CR-V dielectric was found to exhibit a high carrier mobility (0.62 cm(2)/V s), a small subthreshold swing (185 mV/decade), and little hysteresis at low operating voltages (<=-3 V). (c) 2006 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9516
- DOI
- 10.1063/1.2374864
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 89, no. 18, 2006-10-30
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