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Cited 30 time in webofscience Cited 31 time in scopus
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dc.contributor.authorLee, SH-
dc.contributor.authorJang, HM-
dc.contributor.authorSung, HH-
dc.contributor.authorYi, H-
dc.date.accessioned2015-06-25T01:07:41Z-
dc.date.available2015-06-25T01:07:41Z-
dc.date.created2009-02-28-
dc.date.issued2002-09-23-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000002898en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9426-
dc.description.abstractIn view of the difficulty in preparing single crystals, a c-axis oriented epitaxial lead zirconate titanate (PZT) film was prepared as a model system for the single-crystalline PZT. By employing an extraordinary backscattering configuration in which the relevant phonon wave vector, k, is parallel to the film/substrate interface, we have successfully isolated the E [transverse optical (TO)] symmetry phonons from A(1)(TO) phonons. Compared with polarized Raman spectra of the c-axis oriented PbTiO3 film, the polarized spectra of the epitaxial PZT film (with Zr/Ti=40/60) exhibited significant asymmetric line broadening with a noticeable downward shift of the mode frequencies. In addition to this, we observed a splitting of the "silent" mode into the B-1-symmetry mode and the E(TO) mode using the parallel and cross polarization configurations, respectively. (C) 2002 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titlePolarized Raman scattering of epitaxial Pb(Zr,Ti)O-3 thin films in the tetragonal-phase field-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.1509859-
dc.author.googleLee, SHen_US
dc.author.googleJang, HMen_US
dc.author.googleYi, Hen_US
dc.author.googleSung, HHen_US
dc.relation.volume81en_US
dc.relation.issue13en_US
dc.relation.startpage2439en_US
dc.relation.lastpage2441en_US
dc.contributor.id10084272en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.81, no.13, pp.2439 - 2441-
dc.identifier.wosid000178037600041-
dc.date.tcdate2019-01-01-
dc.citation.endPage2441-
dc.citation.number13-
dc.citation.startPage2439-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume81-
dc.contributor.affiliatedAuthorJang, HM-
dc.identifier.scopusid2-s2.0-79955996481-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc20-
dc.description.scptc21*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusFREQUENCY A(1)(TO) PHONON-
dc.subject.keywordPlusPBTIO3-
dc.subject.keywordPlusMEMORIES-
dc.subject.keywordPlusORIGIN-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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장현명JANG, HYUN MYUNG
Div of Advanced Materials Science
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