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dc.contributor.authorKim, GBko
dc.contributor.authorKwak, JSko
dc.contributor.authorBaik, HKko
dc.contributor.authorLee, SMko
dc.contributor.authorOh, SHko
dc.contributor.authorPark, CGko
dc.date.available2015-06-25T01:05:44Z-
dc.date.created2009-02-28-
dc.date.issued2000-01-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.77, no.10, pp.1443 - 1445-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000001516en_US
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/9396-
dc.description.statementofresponsibilityopenen_US
dc.format.extentpdfen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleReaction of Co and capping layers and its effect on CoSi2 formation in Si/SiOx/Co system-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.author.googleKim, GBen_US
dc.author.googleKwak, JSen_US
dc.author.googlePark, CGen_US
dc.author.googleOh, SHen_US
dc.author.googleLee, SMen_US
dc.author.googleBaik, HKen_US
dc.relation.volume77en_US
dc.relation.issue10en_US
dc.relation.startpage1443en_US
dc.relation.lastpage1445en_US
dc.contributor.id10069857en_US
dc.publisher.locationUSen_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.contributor.localauthorPark, CG-
dc.contributor.nonIdAuthorKim, GB-
dc.contributor.nonIdAuthorKwak, JS-
dc.contributor.nonIdAuthorBaik, HK-
dc.contributor.nonIdAuthorLee, SM-
dc.contributor.nonIdAuthorOh, SH-
dc.identifier.wosid000089017200011-
dc.date.tcdate2019-01-01-
dc.citation.endPage1445-
dc.citation.number10-
dc.citation.startPage1443-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume77-
dc.description.journalClass1-
dc.description.wostc6-

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박찬경PARK, CHAN GYUNG
Dept of Materials Science & Enginrg
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