Open Access System for Information Sharing

Login Library

 

Article
Cited 11 time in webofscience Cited 11 time in scopus
Metadata Downloads

Microstructural evidence on direct contact of Au/Ge/Ni/Au ohmic metals to InGaAs channel in pseudomorphic high electron mobility transistor with undoped cap layer SCIE SCOPUS

Title
Microstructural evidence on direct contact of Au/Ge/Ni/Au ohmic metals to InGaAs channel in pseudomorphic high electron mobility transistor with undoped cap layer
Authors
Lee, JLKim, YTLee, JY
Date Issued
1998-09-21
Publisher
AMER INST PHYSICS
Abstract
Microstructural evidence on direct contact of Au/Ge/Ni/Au ohmic metals to a InGaAs channel in AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped GaAs/AlGaAs cap layer was found using transmission electron microscopy, and the results were used to interpret the electrical properties of the contact. The lowest contact resistivity of 3.8 X 10(-6) Omega cm(2), obtained at 420 degrees C annealing, is due to the penetration of the interfacial compounds, Au2Ga and Au2Al, into the buried InGaAs channel. The direct contact of the compounds to the channel causes the reduction of series resistances between the ohmic compounds and the channel, resulting in the low contact resistivity. (C) 1998 American Institute of Physics.
URI
https://oasis.postech.ac.kr/handle/2014.oak/9374
DOI
10.1063/1.122240
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 73, no. 12, page. 1670 - 1672, 1998-09-21
Files in This Item:

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
Read more

Views & Downloads

Browse