DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, June-Mo | - |
dc.contributor.author | Kim, Seul-Gi | - |
dc.contributor.author | Seo, Ja-Young | - |
dc.contributor.author | Cuhadar, Can | - |
dc.contributor.author | Son, Dae-Yong | - |
dc.contributor.author | LEE, DONGHWA | - |
dc.contributor.author | Park, Nam-Gyu | - |
dc.date.accessioned | 2018-10-04T05:48:33Z | - |
dc.date.available | 2018-10-04T05:48:33Z | - |
dc.date.created | 2018-07-28 | - |
dc.date.issued | 2018-07 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/92302 | - |
dc.description.abstract | Organic-inorganic halide perovskite is regarded as one of the potential candidates for next generation resistive switching memory (memristor) material because of fast, millivolt-scale switching, multilevel capability, and high On/Off ratio. Here, resistive switching property of HC(NH2)(2)PbI3 (FAPbI(3)) depending on structural phase is reported. It is found that 1D hexagonal FAPbI(3) (delta-FAPbI(3)), formed at relatively low temperature, is active in memristor, while 3D trigonal FAPbI3 (alpha-FAPbI(3)), formed at temperature higher than 150 degrees C, is inactive. Failure of switching from low resistance state to high resistance state is found for alpha-FAPbI(3), while delta-FAPbI(3) shows stable switching behavior. Density functional calculation reveals that iodine cluster in isotropic 3D alpha-FAPbI(3) is so stable after forming filament that the filament is hard to be ruptured at off state. However, for anisotropic delta-FAPbI(3), iodine cluster is not stable and migration barrier is much lower for c-axis (0.48 eV) than for ab-plane (0.9 eV), which is beneficial for switching. The memristor devices based on delta-FAPbI(3) demonstrate endurance up to 1200 cycles with On/Off ratio (>10(5)), retention time up to 3000 s, multilevel storage capacity, and working even at 80 degrees C. | - |
dc.language | English | - |
dc.publisher | WILEY | - |
dc.relation.isPartOf | ADVANCED ELECTRONIC MATERIALS | - |
dc.title | 1D Hexagonal HC(NH2)(2)PbI3 for Multilevel Resistive Switching Nonvolatile Memory | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/aelm.201800190 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.4, no.9 | - |
dc.identifier.wosid | 000444071300010 | - |
dc.citation.number | 9 | - |
dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.volume | 4 | - |
dc.contributor.affiliatedAuthor | LEE, DONGHWA | - |
dc.identifier.scopusid | 2-s2.0-85050894055 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | delta phase | - |
dc.subject.keywordAuthor | formamidinium lead iodide | - |
dc.subject.keywordAuthor | HC(NH2)(2)PbI3 | - |
dc.subject.keywordAuthor | multilevel | - |
dc.subject.keywordAuthor | resistive switching memory | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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