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dc.contributor.author제정호-
dc.date.accessioned2018-06-27T12:49:45Z-
dc.date.available2018-06-27T12:49:45Z-
dc.date.created2009-03-27-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/91934-
dc.relation.isPartOfInternational workshop on nitride semiconductors-
dc.relation.isPartOfInternational workshop on nitride semiconductors-
dc.titleEvolution of islands during MOCVD growth of GaN on (0001) sapphire-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationInternational workshop on nitride semiconductors-
dc.citation.conferenceDate2002-07-22-
dc.citation.titleInternational workshop on nitride semiconductors-
dc.contributor.affiliatedAuthor제정호-
dc.description.journalClass1-
dc.description.journalClass1-

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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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