Thesis
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 맹완주 | en_US |
| dc.date.accessioned | 2015-02-25T14:00:44Z | - |
| dc.date.available | 2015-02-25T14:00:44Z | - |
| dc.date.issued | 2009 | en_US |
| dc.identifier.other | OAK-2015-06628 | en_US |
| dc.identifier.uri | http://postech.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000001909766 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9009 | - |
| dc.description | Doctor | en_US |
| dc.language | kor | en_US |
| dc.publisher | 포항공과대학교 | en_US |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | HfO2 기반 고유전율 게이트 산화물 박막의 원자층 증착법과 계면 특성 향상에 대한 연구 | en_US |
| dc.title.alternative | Study on atomic layer deposition of HfO2 based high-k gate dielectric and interface properties enhancement | en_US |
| dc.type | Thesis | en_US |
| dc.contributor.college | 일반대학원 신소재공학과 | en_US |
| dc.date.degree | 2009-08 | en_US |
| dc.type.docType | Thesis | - |
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