35 nm T-gate Double Delta Doped In0.52Al0.48As/In0.53Ga0.47As Metamorhpic GaAs HEMTs With an Ultrahigh fmax of 620 GHz
- Title
- 35 nm T-gate Double Delta Doped In0.52Al0.48As/In0.53Ga0.47As Metamorhpic GaAs HEMTs With an Ultrahigh fmax of 620 GHz
- Authors
- 정윤하
- Publisher
- IEEE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/88151
- Article Type
- Conference
- Citation
- IEEE Nanotechnology Materials and Devices Conference 2008, page. 143
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- There are no files associated with this item.
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