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Comparative study of ultra-thin HfSiO and HfSiO/SiO2 gate dielectrics grown by self-limiting surface reaction between Hf(NC2H5)4 and Si(OC4H9)4 precursor
- Title
- Comparative study of ultra-thin HfSiO and HfSiO/SiO2 gate dielectrics grown by self-limiting surface reaction between Hf(NC2H5)4 and Si(OC4H9)4 precursor
- Authors
- 용기중
- Publisher
- 화학공학회
- Article Type
- Conference
- Citation
- 화학공학회 가을 학술대회
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