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dc.contributor.author박찬언ko
dc.contributor.author김지예ko
dc.contributor.author안태규ko
dc.contributor.author김경훈ko
dc.contributor.author김세현ko
dc.date.accessioned2018-06-19T03:53:46Z-
dc.date.available2018-06-19T03:53:46Z-
dc.date.created2016-02-29-
dc.date.issued2015-04-10-
dc.identifier.citation한국고분자학회 2015 춘계학술대회-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/71494-
dc.publisher한국고분자학회-
dc.titleThe Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics-
dc.typeConference-
dc.type.rimsCONF-
dc.contributor.localauthor박찬언-
dc.contributor.nonIdAuthor김지예-
dc.contributor.nonIdAuthor안태규-
dc.contributor.nonIdAuthor김경훈-
dc.contributor.nonIdAuthor김세현-
dc.citation.title한국고분자학회 2015 춘계학술대회-
dc.description.journalClass2-
dc.identifier.conferencecountryKO-

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박찬언PARK, CHAN EON
Dept. of Chemical Enginrg
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