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The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics

Title
The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
Authors
박찬언김지예안태규김경훈김세현
POSTECH Authors
박찬언
Date Issued
2015-04-10
Publisher
한국고분자학회
URI
https://oasis.postech.ac.kr/handle/2014.oak/71494
Article Type
Conference
Citation
한국고분자학회 2015 춘계학술대회, 2015-04-10
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박찬언PARK, CHAN EON
Dept. of Chemical Enginrg
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