Conference
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Low-Frequency Noise Behavior of La-Doped HfSiON/Metal Gate nMOSFETs
- Title
- Low-Frequency Noise Behavior of La-Doped HfSiON/Metal Gate nMOSFETs
- Authors
- 정윤하
- POSTECH Authors
- 정윤하
- Date Issued
- 14-Apr-2011
- Publisher
- IEEE
- Article Type
- Conference
- Citation
- International Reliability Physics Symposium, 2011-04-14
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Communities & Collection
Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg