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Analysis of Parasitic Bottom Capacitance in n- and p-type Si-Nanowire Field Effect Transistors on Bulk

Title
Analysis of Parasitic Bottom Capacitance in n- and p-type Si-Nanowire Field Effect Transistors on Bulk
Authors
정윤하
POSTECH Authors
정윤하
Date Issued
16-Aug-2011
Publisher
IEEE
URI
http://oasis.postech.ac.kr/handle/2014.oak/61505
Article Type
Conference
Citation
International Conference on Nanotechnology, 2011-08-16
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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