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Analysis of Bottom Channel Effect in Silicon Nanowire FET based on Bulk-Silicon: Reduction of Parasitic Capacitance caused by SiGe layer

Title
Analysis of Bottom Channel Effect in Silicon Nanowire FET based on Bulk-Silicon: Reduction of Parasitic Capacitance caused by SiGe layer
Authors
정윤하
POSTECH Authors
정윤하
Date Issued
29-Sep-2011
Publisher
The Japan Society of Applied Physics
URI
http://oasis.postech.ac.kr/handle/2014.oak/61503
Article Type
Conference
Citation
2011 International Conference on Solid State and Device Materials, 2011-09-29
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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