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The Effect of La2O3 Capping Layer Thickness on Hot Carrier Degradation of n-MOSFETs with High-k/Metal Gate Stack

Title
The Effect of La2O3 Capping Layer Thickness on Hot Carrier Degradation of n-MOSFETs with High-k/Metal Gate Stack
Authors
강봉구김동우
POSTECH Authors
강봉구
Date Issued
28-Sep-2011
Publisher
THE JAPAN SOCIETY OF APPLIED PHYSICS
URI
http://oasis.postech.ac.kr/handle/2014.oak/59927
Article Type
Conference
Citation
SSDM(International Conference on Solid State Devices and Materials), 2011-09-28
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강봉구KANG, BONG KOO
Dept of Electrical Enginrg
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