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Conference
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dc.contributor.author김오현ko
dc.contributor.author송재준ko
dc.contributor.author문대현ko
dc.date.accessioned2018-06-18T00:46:00Z-
dc.date.available2018-06-18T00:46:00Z-
dc.date.created2011-04-04-
dc.date.issued2010-11-09-
dc.identifier.citationInternational MNC-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/57850-
dc.publisherJSAP-
dc.titleSimplified Model of the Effect of Source/Drain Doping Gradient on Capacitance and Resistance in a Double-Gate MOSFET-
dc.typeConference-
dc.type.rimsCONF-
dc.contributor.localauthor김오현-
dc.contributor.nonIdAuthor송재준-
dc.contributor.nonIdAuthor문대현-
dc.citation.titleInternational MNC-
dc.description.journalClass1-
dc.identifier.conferencecountryJA-

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김오현KIM, OHYUN
Dept of Electrical Enginrg
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