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Inhomogenity of Indium composition observed in InGaN/GaN active region of LED by APT and STEM-HAADF
- Title
- Inhomogenity of Indium composition observed in InGaN/GaN active region of LED by APT and STEM-HAADF
- Authors
- 박찬경
- POSTECH Authors
- 박찬경
- Date Issued
- 8-Jul-2010
- Publisher
- IFES
- Article Type
- Conference
- Citation
- IFES, 2010-07-08
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Related Researcher
- 박찬경PARK, CHAN GYUNG
- Dept of Materials Science & Enginrg