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Inhomogenity of Indium composition observed in InGaN/GaN active region of LED by APT and STEM-HAADF

Title
Inhomogenity of Indium composition observed in InGaN/GaN active region of LED by APT and STEM-HAADF
Authors
박찬경
POSTECH Authors
박찬경
Date Issued
8-Jul-2010
Publisher
IFES
URI
http://oasis.postech.ac.kr/handle/2014.oak/56989
Article Type
Conference
Citation
IFES, 2010-07-08
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박찬경PARK, CHAN GYUNG
Dept of Materials Science & Enginrg
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