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Indium rich clusters formed in InGaN well layer of LED devices analyzed by APT and STEM-EELS
- Title
- Indium rich clusters formed in InGaN well layer of LED devices analyzed by APT and STEM-EELS
- Authors
- 박찬경
- Date Issued
- 2010-09-22
- Publisher
- IMC 17
- Article Type
- Conference
- Citation
- IMC 17, 2010-09-22
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Related Researcher
- 박찬경PARK, CHAN GYUNG
- Dept of Materials Science & Enginrg