Dislocation binding as an origin for the improvement of room temperature ductility in Mg alloys
SCIE
SCOPUS
- Title
- Dislocation binding as an origin for the improvement of room temperature ductility in Mg alloys
- Authors
- Kim, Ki-Hyun; Hwang, Ji Hyun; Jang, Hyo-Sun; Jeon, Jong Bae; Kim, Nack Joon; Lee, Byeong-Joo
- Date Issued
- 2018-02
- Publisher
- ELSEVIER SCIENCE SA
- Abstract
- Improving room temperature ductility and formability is a bottleneck for a wide industrial application of Mg alloys, but even the mechanism for the effect of alloying elements on the deformation behavior of Mg is not clearly known. Here, using a molecular dynamics simulation, we clarify the role of alloying elements in improving the room temperature ductility of Mg alloys: Solute atoms have stronger dislocation binding tendency and solid solution strengthening effect on basal < a > slip planes than on non-basal < c + a > slip planes, reduce the anisotropy in the critical resolved shear stress between slip systems, and eventually improves the room temperature ductility. We predict that any solute elements with a size difference from Mg can improve the room temperature ductility, once the alloying amount is carefully controlled. By proving the validity of the prediction experimentally, we provide a new guide for designing Mg alloys with improved room temperature ductility and formability.
- Keywords
- METHOD INTERATOMIC POTENTIALS; STACKING-FAULT ENERGY; NONBASAL SLIP SYSTEMS; SOLID-SOLUTION; MAGNESIUM ALLOYS; STRETCH FORMABILITY; C PLUS; BINARY-SYSTEMS; AB-INITIO; 1ST-PRINCIPLES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/51040
- DOI
- 10.1016/j.msea.2018.01.010
- ISSN
- 0921-5093
- Article Type
- Article
- Citation
- MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, vol. 715, page. 266 - 275, 2018-02
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