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Dislocation binding as an origin for the improvement of room temperature ductility in Mg alloys SCIE SCOPUS

Title
Dislocation binding as an origin for the improvement of room temperature ductility in Mg alloys
Authors
Kim, Ki-HyunHwang, Ji HyunJang, Hyo-SunJeon, Jong BaeKim, Nack JoonLee, Byeong-Joo
Date Issued
2018-02
Publisher
ELSEVIER SCIENCE SA
Abstract
Improving room temperature ductility and formability is a bottleneck for a wide industrial application of Mg alloys, but even the mechanism for the effect of alloying elements on the deformation behavior of Mg is not clearly known. Here, using a molecular dynamics simulation, we clarify the role of alloying elements in improving the room temperature ductility of Mg alloys: Solute atoms have stronger dislocation binding tendency and solid solution strengthening effect on basal < a > slip planes than on non-basal < c + a > slip planes, reduce the anisotropy in the critical resolved shear stress between slip systems, and eventually improves the room temperature ductility. We predict that any solute elements with a size difference from Mg can improve the room temperature ductility, once the alloying amount is carefully controlled. By proving the validity of the prediction experimentally, we provide a new guide for designing Mg alloys with improved room temperature ductility and formability.
Keywords
METHOD INTERATOMIC POTENTIALS; STACKING-FAULT ENERGY; NONBASAL SLIP SYSTEMS; SOLID-SOLUTION; MAGNESIUM ALLOYS; STRETCH FORMABILITY; C PLUS; BINARY-SYSTEMS; AB-INITIO; 1ST-PRINCIPLES
URI
https://oasis.postech.ac.kr/handle/2014.oak/51040
DOI
10.1016/j.msea.2018.01.010
ISSN
0921-5093
Article Type
Article
Citation
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, vol. 715, page. 266 - 275, 2018-02
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이병주LEE, BYEONG JOO
Dept of Materials Science & Enginrg
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