DC Field | Value | Language |
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dc.contributor.author | Kim, Kyoung-Whan | - |
dc.contributor.author | Lee, Kyung-Jin | - |
dc.contributor.author | Sinova, Jairo | - |
dc.contributor.author | Lee, Hyun-Woo | - |
dc.contributor.author | Stiles, M. D. | - |
dc.date.accessioned | 2018-06-15T05:30:12Z | - |
dc.date.available | 2018-06-15T05:30:12Z | - |
dc.date.created | 2017-12-04 | - |
dc.date.issued | 2017-09 | - |
dc.identifier.issn | 2469-9950 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/50544 | - |
dc.description.abstract | We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal-metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a damping like component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism. | - |
dc.language | English | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.relation.isPartOf | PHYSICAL REVIEW B | - |
dc.subject | TOPOLOGICAL INSULATOR | - |
dc.subject | DOMAIN-WALLS | - |
dc.subject | MAGNITUDE | - |
dc.subject | TRANSPORT | - |
dc.subject | SYSTEMS | - |
dc.title | Spin-orbit torques from interfacial spin-orbit coupling for various interfaces | - |
dc.type | Article | - |
dc.identifier.doi | 10.1103/PhysRevB.96.104438 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW B, v.96, no.10, pp.104438 | - |
dc.identifier.wosid | 000411768300003 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 104438 | - |
dc.citation.title | PHYSICAL REVIEW B | - |
dc.citation.volume | 96 | - |
dc.contributor.affiliatedAuthor | Lee, Hyun-Woo | - |
dc.identifier.scopusid | 2-s2.0-85029958385 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 12 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | TOPOLOGICAL INSULATOR | - |
dc.subject.keywordPlus | DOMAIN-WALLS | - |
dc.subject.keywordPlus | MAGNITUDE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | SYSTEMS | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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