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dc.contributor.author백록현-
dc.contributor.author정윤하-
dc.contributor.author백창기-
dc.contributor.author여경환-
dc.contributor.author김동원-
dc.contributor.author정진용-
dc.contributor.author김대만-
dc.date.accessioned2018-05-24T11:24:43Z-
dc.date.available2018-05-24T11:24:43Z-
dc.date.created2017-02-23-
dc.date.issued2010-10-12-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/49481-
dc.publisherIEEE-
dc.relation.isPartOfIEEE Nanotechnology Materials and Devices Conference (NMDC2010)-
dc.relation.isPartOfIEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE-
dc.titleComparative Study of C-V Characteristics in Si-NWFET and MOSFET (Invited paper)-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationIEEE Nanotechnology Materials and Devices Conference (NMDC2010)-
dc.citation.conferencePlaceUS-
dc.citation.titleIEEE Nanotechnology Materials and Devices Conference (NMDC2010)-
dc.contributor.affiliatedAuthor백록현-
dc.description.journalClass1-
dc.description.journalClass1-

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백록현BAEK, ROCK HYUN
Dept of Electrical Enginrg
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