Impact of High-k Spacers on Parasitic Effects Considering DC/AC Performance Optimization in Si-Nanowire FETs for sub 10 nm Technology Node
- Title
- Impact of High-k Spacers on Parasitic Effects Considering DC/AC Performance Optimization in Si-Nanowire FETs for sub 10 nm Technology Node
- Authors
- 백록현; 홍재호; 이상현; 김예람; 정의영; 윤준식; 이정수; 정윤하
- Date Issued
- 2014-09-08
- Publisher
- The Japan Society of Applied Physics
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/49464
- Article Type
- Conference
- Citation
- Solid State Devices and Materials (SSDM2014), 2014-09-08
- Files in This Item:
- There are no files associated with this item.
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