Impact of Dipole-induced Dielectric Relaxation on High-frequency Performance in La-incorporated HfSiON/Metal Gate
- Title
- Impact of Dipole-induced Dielectric Relaxation on High-frequency Performance in La-incorporated HfSiON/Metal Gate
- Authors
- 이정수
- Date Issued
- 2009-12-08
- Publisher
- IEEE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/46659
- Article Type
- Conference
- Citation
- International Eledtron Devices Meeting 2009, page. 127 - 130, 2009-12-08
- Files in This Item:
- There are no files associated with this item.
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