High-Efficiency GaN HEMT Power Amplifier Design Based on Inverse Class-E Topology
- Title
- High-Efficiency GaN HEMT Power Amplifier Design Based on Inverse Class-E Topology
- Authors
- 정윤하
- Date Issued
- 2009-09-30
- Publisher
- European Microwave Association
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/46264
- Article Type
- Conference
- Citation
- European Microwave Week 2009, page. 500 - 503, 2009-09-30
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.