Conference
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effects of Extension Profile Engineering to Suppress Boron TED on the Reliability of High-k/Metal Gate SiGe pMOSFETS
- Title
- Effects of Extension Profile Engineering to Suppress Boron TED on the Reliability of High-k/Metal Gate SiGe pMOSFETS
- Authors
- 이정수
- Date Issued
- 2009-08-26
- Publisher
- IEEE
- Article Type
- Conference
- Citation
- IEEE International Symposium on Advanced Gate Stack Technology, 2009-08-26
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Communities & Collection
Related Researcher
- 이정수LEE, JEONG SOO
- Dept of Electrical Enginrg