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ZnO Nanowire Based Photoelectrical Resistive Switches for Flexible Memory

Title
ZnO Nanowire Based Photoelectrical Resistive Switches for Flexible Memory
Authors
Park, JinjooSong, HongseonLee, Eun KwangOH, JOON HAKYONG, KIJUNG
POSTECH Authors
OH, JOON HAKYONG, KIJUNG
Date Issued
Sep-2015
Publisher
ELECTROCHEMICAL SOC INC
Abstract
In this work, a non-volatile resistive optoelectronic memory was demonstrated in a flexible system that plays the dual roles of a reversible photo-reactive element and a signal-collecting element. We attempted to demonstrate the tactile sensor by detecting the rotation angle and bending angle of the wearable information appliance worn by the user. This motion-sensing for certain critical angle and information-storing functionality is enabled by photo-tunable resistive switching behaviors, which results from bending the flexible device in diverse convex angles with respect to the incident light direction. Furthermore, we investigated the basic mechanism of resistive photoelectrical switching behaviors by studying the effects of electrostatic barrier at the Au/ZnO junction, e.g., a Schottky barrier depending on the photonic and electric condition. Moreover, by employing a polymer structure, application in a prototype device provided improved endurance or retention of data. (C) 2015 The Electrochemical Society. All rights reserved.
URI
http://oasis.postech.ac.kr/handle/2014.oak/41317
DOI
10.1149/2.1111509jes
ISSN
0013-4651
Article Type
Article
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 162, no. 09, page. H713 - H718, 2015-09
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용기중YONG, KIJUNG
Dept. of Chemical Enginrg
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