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Department of Materials Science & Engineering (신소재공학과)
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Article
Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices
SCIE
SCOPUS
NANOTECHNOLOGY, vol. 23, no. 32, 2012-08-17
Kim, S
;
Lee, D
;
Park, J
;
Jung, S
;
Lee, W
;
Shin, J
;
Woo, J
;
Choi, G
;
Hwang, H
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