Issue Date | Title |
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2005-Nov | Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor depositionPDF link JOURNAL OF APPLIED PHYSICS, vol. 98, no. 10, 2005-11 Ramaiah, KS; Bhat, I; Chow, TP; Kim, JK; Schubert, EF; Johnstone, D; Akarca-Biyikli, S |
2008-Apr | JOURNAL OF APPLIED PHYSICS, vol. 103, no. 8, 2008-04 Mont, FW; Kim, JK; Schubert, MF; Schubert, EF; Siegel, RW |
2011-Apr | Synthesis of transparent mesoporous tungsten trioxide films with enhanced photoelectrochemical response: application to unassisted solar water splittingPDF link ENERGY & ENVIRONMENTAL SCIENCE, vol. 4, no. 4, page. 1465 - 1470, 2011-04 Kim, JK; Shin, K; Cho, SM; Lee, TW; Park, JH |
2011-Oct | Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droopPDF link APPLIED PHYSICS LETTERS, vol. 99, no. 18, page. 181115 - 181117, 2011-10 Hwang, S; Ha, WJ; Kim, JK; Xu, JR; Cho, JH; Schubert, EF |
2011-Sep | Optically functional surface composed of patterned graded-refractive-index coatings to enhance light-extraction of GaInN light-emitting diodesPDF link JOURNAL OF APPLIED PHYSICS, vol. 110, no. 5, 2011-09 Noemaun, AN; Mont, FW; Lin, GB; Cho, J; Schubert, EF; Kim, GB; Sone, C; Kim, JK |
2010-Mar | JOURNAL OF APPLIED PHYSICS, vol. 107, no. 6, page. 63102, 2010-03 Wonseok Lee; Min-Ho Kim,; Di Zhu; Ahmed N. Noemaun; Kim, JK; Schubert, EF |
2013-Aug | Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layerPDF link Applied Physics Letters, vol. 103, no. 6, 2013-08 Jun Hyuk Park; Dong Yeong Kim; Sunyong Hwang; David Meyaard; E. Fred Schubert; Yu Dae Han; Joo Won Choi; Jaehee Cho; Kim, JK |
2007-Dec | APPLIED PHYSICS LETTERS, vol. 91, no. 23, 2007-12 Schubert, MF; Chhajed, S; Kim, JK; Schubert, EF; Koleske, DD; Crawford, MH; Lee, SR; Fischer, AJ; Thaler, G; Banas, MA |
2007-Sep | Parasitic sub-band-gap emission originating from compensating native defects in Si doped AlGaNPDF link APPLIED PHYSICS LETTERS, vol. 91, no. 12, 2007-09 Chen, KX; Dai, Q; Lee, W; Kim, JK; Schubert, EF; Liu, W; Wu, S; Li, X; Smart, JA |
2007-Jul | Polarization of light emission by 460 nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substratesPDF link APPLIED PHYSICS LETTERS, vol. 91, no. 5, 2007-07 Schubert, MF; Chhajed, S; Kim, JK; Schubert, EF; Cho, J |
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