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Browsing "1. Journal Papers" by SubjectN-TYPE GAAS

전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Article

AlGaAs/InGaAs pseudomorphic high electron mobility transistor using Pd/Ge ohmic contactSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 40, no. 3A, page. 1188 - 1193, 2001-03

Article

Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistorSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 74, no. 19, page. 2866 - 2868, 1999-05-10

Article

Pd-Ge-Au based hybrid ohmic contacts to high-low doped GaAs field-effect transistorSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 36, no. 9A, page. 5451 - 5458, 1997-09

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