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Showing results 1 to 1 of 1
Article
Studies of 4H-SiC wafer and its epitaxial layers grown by chemical vapor deposition
SCIE
SCOPUS
PHYSICA B-CONDENSED MATTER, vol. 391, no. 1, page. 35 - 41, 2007-03-15
Ramaiah, KS
;
Bhat, I
;
Chow, TP
;
Kim, JK
;
Schubert, EF
;
et al
1
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