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Browsing "Department of Materials Science & Engineering (신소재공학과)" by  Subject1.3 MU-M

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Article
Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dotsSCIESCOPUS

JOURNAL OF CRYSTAL GROWTH, vol. 275, no. 3-4, page. 415 - 421, 2005-03-01

Article
Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealingSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 96, no. 10, page. 5496 - 5499, 2004-11-15

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