Effect of curved graphene oxide in a GaN light-emitting-diode for improving heat dissipation with a patterned sapphire substrate
SCIE
SCOPUS
- Title
- Effect of curved graphene oxide in a GaN light-emitting-diode for improving heat dissipation with a patterned sapphire substrate
- Authors
- Han, M; Han, N; Jung, E; Ryu, BD; Ko, KB; Cuong, TV; Kim, H; Kim, JK; Hong, CH
- Date Issued
- 2016-08
- Publisher
- IOP Publishing
- Abstract
- This article reports on the development of a reduced graphene oxide (rGO)-embedded light-emitting diode (LED) on a patterned sapphire substrate (PSS), for improving heat dissipation and reducing threading dislocations. The prototype device fabrication involves the generation of scalable curved graphene oxide microscale patterns on a PSS, followed by thermal reduction and epitaxial lateral overgrowth of GaN in a metal-organic chemical vapor deposition system with a one-step process. Using the forward voltage method, the junction temperature T-j of the rGO-embedded LED was found to be reduced by about 17 degrees C from the similar to 62 degrees C of the LED grown without the rGO buffer layer. Temperature-dependent light output power and chip surface temperature measurements were also performed and the results are discussed.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/36732
- DOI
- 10.1088/0268-1242/31/8/085010
- ISSN
- 0268-1242
- Article Type
- Article
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 31, no. 8, page. 85010, 2016-08
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