Enhancing electron mobility in La-doped BaSnO3 thin films by thermal strain to annihilate extended defects
SCIE
SCOPUS
- Title
- Enhancing electron mobility in La-doped BaSnO3 thin films by thermal strain to annihilate extended defects
- Authors
- Sangbae Yu; Daseob Yoon; Son, J
- Date Issued
- 2016-06-27
- Publisher
- American institute of physics
- Abstract
- We report the enhancement of room-temperature electron mobility in La-doped BaSnO3 (LBSO) thin films with thermal strain induced by high temperature nitrogen (N-2) annealing. Simple annealing under an N-2 environment consistently doubled the electron mobility of the LBSO films on the SrTiO3 (STO) substrates to as high as 78 cm(2) V-1 s(-1) at a carrier concentration of 4.0 x 10(20) cm(-3). This enhancement is mainly attributed to annihilation of extended defects as a consequence of compressive strain induced by the difference in the thermal expansion coefficients of LBSO and STO. Our study suggests that thermal strain can be exploited to reduce extended defects and to facilitate electron transport in transparent oxide semiconductors.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/36521
- DOI
- 10.1063/1.4954638
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 108, no. 26, page. 262101, 2016-06-27
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.