Investigation of Sub-10-nm Diameter, Gate-All-Around Nanowire Field-Effect Transistors for Electrostatic Discharge Applications
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- Title
- Investigation of Sub-10-nm Diameter, Gate-All-Around Nanowire Field-Effect Transistors for Electrostatic Discharge Applications
- Authors
- Liu, W; Liou, JJ; Jiang, Y; Singh, N; Lo, GQ; Chung, J; Jeong, YH
- Date Issued
- 2010-05
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- Electrostatic discharge (ESD) robustness of a promising nanoscaled device, the gate-all-around nanowire field-effect transistor (NW FET), was characterized for the first time using the transmission-line pulsing technique. The effects of gate length, nanowire dimension, and nanowire count on the failure current, leakage current, trigger voltage, and on-resistance were investigated. ESD performances of the gate-all-around NW FET and other nanostructure devices, such as the poly-Si nanowire thin-film transistor and FinFET were also compared and discussed.
- Keywords
- Electrostatic discharge (ESD); failure current; leakage current (I(leakage)); nanowire; on-resistance (R(on))
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25849
- DOI
- 10.1109/TNANO.2009.2038225
- ISSN
- 1536-125X
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON NANOTECHNOLOGY, vol. 9, no. 3, page. 352 - 354, 2010-05
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