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Controlled one-dimensional nanostructures in poly(3-hexylthiophene) thin film for high-performance organic field-effect transistors SCIE SCOPUS

Title
Controlled one-dimensional nanostructures in poly(3-hexylthiophene) thin film for high-performance organic field-effect transistors
Authors
Kim, DHJang, YPark, YDCho, K
Date Issued
2006-08-17
Publisher
AMER CHEMICAL SOC
Abstract
With the aim of improving the field-effect mobilities in poly(3-hexylthiophene) (P3HT) thin film transistors, we controlled the nanostructures of P3HT thin film by changing the solvent vapor pressure in a spin-coating chamber during solidification. The transistors with P3HT thin films spin-coated under a high solvent vapor pressure (56.5 KPa), showing the one-dimensional nanowire morphologies, resulted in the relatively high field-effect mobilities (0.02 cm(2)/( V(.)s)) that are typically more than 1 order of magnitude higher than those prepared under ambient conditions, showing the featureless morphologies. This can be attributed to the higher solvent vapor pressure during film formation, providing the solvent is allowed to evaporate slowly and the degree of ordering within the P3HT crystalline domains is dramatically improved.
Keywords
EFFECT MOBILITY; REGIOREGULAR POLYTHIOPHENE; CONJUGATED POLYMERS; MOLECULAR-WEIGHT; NANOWIRES; SURFACE; TRANSITIONS; NANOFIBERS; COPOLYMERS; MORPHOLOGY
URI
https://oasis.postech.ac.kr/handle/2014.oak/23877
DOI
10.1021/JP062899Y
ISSN
1520-6106
Article Type
Article
Citation
JOURNAL OF PHYSICAL CHEMISTRY B, vol. 110, no. 32, page. 15763 - 15768, 2006-08-17
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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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