DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, WH | - |
dc.contributor.author | Park, SJ | - |
dc.contributor.author | Son, JY | - |
dc.contributor.author | Kim, H | - |
dc.date.accessioned | 2016-04-01T01:26:45Z | - |
dc.date.available | 2016-04-01T01:26:45Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2008-01-30 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.other | 2008-OAK-0000007489 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/22946 | - |
dc.description.abstract | We fabricated metallic nanostructures directly on Si substrates through a hybrid nanoprocess combining atomic layer deposition (ALD) and a self-assembled anodic aluminum oxide (AAO) nanotemplate. ALD Ru films with Ru(DMPD)(EtCp) as a precursor and O-2 as a reactant exhibited high purity and low resistivity with negligible nucleation delay and low roughness. These good growth characteristics resulted in the excellent conformality for nanometer-scale vias and trenches. Additionally, AAO nanotemplates were fabricated directly on Si and Ti/Si substrates through a multiple anodization process. AAO nanotemplates with various hole sizes (30-100 nm) and aspect ratios (2:1-20:1) were fabricated by controlling the anodizing process parameters. The barrier layers between AAO nanotemplates and Si substrates were completely removed by reactive ion etching (RIE) using BCl3 plasma. By combining the ALD Ru and the AAO nanotemplate, Ru nanostructures with controllable sizes and shapes were prepared on Si and Ti/Si substrates. The Ru nanowire array devices as a platform for sensor devices exhibited befitting properties of good ohmic contact and high surface/volume ratio. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.subject | RUTHENIUM THIN-FILMS | - |
dc.subject | ARRAYS | - |
dc.subject | LITHOGRAPHY | - |
dc.subject | DIELECTRICS | - |
dc.subject | ELECTRODES | - |
dc.subject | NANOTUBES | - |
dc.subject | TEMPLATE | - |
dc.subject | SILICON | - |
dc.subject | METAL | - |
dc.title | Ru nanostructure fabrication using an anodic aluminum oxide nanotemplate and highly conformal Ru atomic layer deposition | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1088/0957-4484/19/04/045302 | - |
dc.author.google | "Kim, WH | - |
dc.author.google | Park, SJ | - |
dc.author.google | Son, JY | - |
dc.author.google | Kim, H" | - |
dc.relation.volume | 19 | - |
dc.relation.issue | 4 | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.19, no.4 | - |
dc.identifier.wosid | 000252967000005 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 4 | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 19 | - |
dc.contributor.affiliatedAuthor | Kim, H | - |
dc.identifier.scopusid | 2-s2.0-38049062506 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 76 | - |
dc.description.scptc | 80 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | RUTHENIUM THIN-FILMS | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | ELECTRODES | - |
dc.subject.keywordPlus | NANOTUBES | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | METAL | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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