Plasma characteristics and antenna electrical characteristics of an internal linear inductively coupled plasma source with a multi-polar magnetic field
SCIE
SCOPUS
- Title
- Plasma characteristics and antenna electrical characteristics of an internal linear inductively coupled plasma source with a multi-polar magnetic field
- Authors
- Kim, KN; Lim, JH; Park, JK; Yeom, GY; Lee, SH; Lee, JK
- Date Issued
- 2008-02
- Publisher
- SPRINGER
- Abstract
- The development of a large-area plasma source with high density plasmas is desired for a variety of plasma processes from microelectronics fabrication to flat panel display device fabrication. In this study, a novel internal-type linear inductive antenna referred to as "double comb-type antenna" was used for a large-area plasma source with the substrate area of 880 mm x 660 mm and the effect of plasma confinement by applying multi-polar magnetic field was investigated. High density plasmas on the order of 3.2 x 10(11) cm(-3) which is 50% higher than that obtained for the source without the magnetic field could be obtained at the pressure of 15 mTorr Ar and at the inductive power of 5,000 W with good plasma stability. The plasma uniformity < 3% could be also obtained within the substrate area. When SiO2 film was etched using the double comb-type antenna, the average etch rate of about 2, 100 angstrom/min could be obtained with the etch uniformity of 5.4% on the substrate area using 15 mToff SF6, 5,000 W of rf power, and -34 V of dc-bias voltage. The higher plasma density with an excellent uniformity and a lower rf antenna voltage obtained by the application of the magnetic field are related to the electron confinement in a direction normal to the antenna line.
- Keywords
- plasma; large area; display; impedance; DISCHARGE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22902
- DOI
- 10.1007/s11090-007-9112-0
- ISSN
- 0272-4324
- Article Type
- Article
- Citation
- PLASMA CHEMISTRY AND PLASMA PROCESSING, vol. 28, no. 1, page. 147 - 158, 2008-02
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