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Versatile use of vertical-phase-separation-induced bilayer structures in organic thin-film transistors SCIE SCOPUS

Title
Versatile use of vertical-phase-separation-induced bilayer structures in organic thin-film transistors
Authors
Qiu, LLim, JAWang, XLee, WHHwang, MCho, K
Date Issued
2008-03-18
Publisher
WILEY-V C H VERLAG GMBH
Abstract
A semiconductor-top and dielectric-bottom bilayer structure is fabricated by surface-induced vertical phase separation of poly (3-hexylthiophene) (P3HT) and poly(methyl methacrylate) (PMMA) blends (see figure). This structure allows to prepare high-performance, low-semiconductor-content, and low-voltage-driven TFTs in a very effective method, in which the dielectric and semiconductor layers are deposited onto a substrate in a one-step process.
Keywords
INTEGRATED-CIRCUITS; POLYMER BLENDS; POLY(3-HEXYLTHIOPHENE); POLYTHIOPHENE; INTERFACE; TRANSPORT; MOBILITY; DEVICES
URI
https://oasis.postech.ac.kr/handle/2014.oak/22821
DOI
10.1002/adma.200702505
ISSN
0935-9648
Article Type
Article
Citation
ADVANCED MATERIALS, vol. 20, no. 6, page. 1141 - 1145, 2008-03-18
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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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