Effects of sulfide treatment on the gate voltage swing of InP MISFETs with photo-CVD grown P3N5 gate insulator
SCIE
- Title
- Effects of sulfide treatment on the gate voltage swing of InP MISFETs with photo-CVD grown P3N5 gate insulator
- Authors
- Jo, SK; Lee, BH; Jeong, MY; Jeong, YH; Sugano, T
- Date Issued
- 1996-01
- Publisher
- IOP PUBLISHING LTD
- Abstract
- The effects of the sulfide treatment on the Al-P3N5/InP MIS Devices with a photo-CVD grown P3N5 insulating film are investigated. The minimum density of interface trap states is as low as 2.6x10(10)/cm(2) . eV, and has been obtained from the sulfide treated sample at 40 degrees C for 20min. We have successfully fabricated the depletion mode InP MISFETs for microwave power device applications. The effective channel electron mobility is observed to be 3100 cm(2)/V . s at 300K. The extrinsic transconductance of 5.8mS/mm shows a broad plateau region through the 4 V gate voltage swing. The InP MISFET with large gate voltage swing is attractive for power device applications.
- Keywords
- SURFACES; SULFUR
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21661
- ISSN
- 0951-3248
- Article Type
- Article
- Citation
- INSTITUTE OF PHYSICS CONFERENCE SERIES, vol. 145, page. 775 - 778, 1996-01
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- There are no files associated with this item.
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