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dc.contributor.authorKwak, JSko
dc.contributor.authorKim, HNko
dc.contributor.authorBaik, HKko
dc.contributor.authorLee, JLko
dc.contributor.authorShin, DWko
dc.contributor.authorPark, CGko
dc.contributor.authorKim, Hko
dc.contributor.authorPyun, KEko
dc.date.available2016-03-31T14:17:23Z-
dc.date.created2009-02-28-
dc.date.issued1996-10-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.80, no.7, pp.3904 - 3909-
dc.identifier.issn0021-8979-
dc.identifier.other1996-OAK-0000009554-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/21474-
dc.description.abstractInterfacial microstructures of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using cross-sectional transmission electron microscopy? and the results are used to interpret the electrical properties. Annealing al 300 degrees C yields a contact resistance of 0.62 Omega mm and the layer structure is changed to GaAs/PdGe/Au4Ti/TiO. The ohmic contact is formed through a solid phase regrowth of GaAs heavily doped with Ce below the PdGe layer. At 380 degrees C, the lowest contact resistance of 0.33 Omega mm is obtained. The layer structure is changed to GaAs/(Ge-Ti)/PdGe/TiO. Spikes composed of Au and AuGa are found at the grain boundaries of the PdGe compound. The formation of AuGa at 380 degrees C reduces the contact resistance through the creation of more Ga vacancies al the interface of GaAs/PdGe, and the incorporation of elemental Ge. (C) 1996 American institute of Physics.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectGE-
dc.subjectPD-
dc.subjectDECOMPOSITION-
dc.subjectDIFFUSION-
dc.subjectPHASES-
dc.subjectPOWER-
dc.titleMICROSTRUCTURAL AND ELECTRICAL INVESTIGATIONS OF PD/GE/TI/AU OHMIC CONTACT TO N-TYPE GAAS-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1063/1.363347-
dc.author.googleKWAK, JS-
dc.author.googleKIM, HN-
dc.author.googleBAIK, HK-
dc.author.googleLEE, JL-
dc.author.googleSHIN, DW-
dc.author.googlePARK, CG-
dc.author.googleKIM, H-
dc.author.googlePYUN, KE-
dc.relation.volume80-
dc.relation.issue7-
dc.relation.startpage3904-
dc.relation.lastpage3909-
dc.contributor.id10069857-
dc.publisher.locationUS-
dc.relation.journalJOURNAL OF APPLIED PHYSICS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.contributor.localauthorLee, JL-
dc.contributor.localauthorPark, CG-
dc.contributor.nonIdAuthorKwak, JS-
dc.contributor.nonIdAuthorKim, HN-
dc.contributor.nonIdAuthorBaik, HK-
dc.contributor.nonIdAuthorShin, DW-
dc.contributor.nonIdAuthorKim, H-
dc.contributor.nonIdAuthorPyun, KE-
dc.identifier.wosidA1996VL80100044-
dc.date.tcdate2019-01-01-
dc.citation.endPage3909-
dc.citation.number7-
dc.citation.startPage3904-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume80-
dc.identifier.localId0000009554-
dc.identifier.localId0000009554-
dc.identifier.localId0000009555-
dc.identifier.scopusid2-S2.0-0009774989-
dc.description.journalClass1-
dc.description.wostc7-

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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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