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Spatially-controllable quantum well intermixing with stripe-size dependence in AlGaAs heterostructures

Title
Spatially-controllable quantum well intermixing with stripe-size dependence in AlGaAs heterostructures
Authors
Son, NJHan, HKwon, OD
POSTECH Authors
Han, H
Date Issued
Jan-1998
Publisher
JAPAN J APPLIED PHYSICS
Abstract
Quantum well intermixing based on impurity-free vacancy disordering in Al0.7Ga0.93As/AlxGa1-xAs graded-index (x = 0.23-0.5) heterostructures has been performed an a single wafer with various mesa structures by a one-step annealing. From photoluminescence and laser characteristics, it has been demonstrated that the extent of quantum well intermixing can be spatially controlled by simply varying the mesa widths. It has been found that the bandgap shift induced by the intermixing increases as the mesa width decreases.
Keywords
quantum well intermixing; impurity-free vacancy disordering; stripe size dependence; semiconductor laser; photoluminescence; annealing; bandgap; DIFFUSION; STRESS
URI
http://oasis.postech.ac.kr/handle/2014.oak/20629
ISSN
0021-4922
Article Type
Article
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 37, no. 9A, page. 4818 - 4821, 1998-01
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한해욱HAN, HAEWOOK
Dept of Electrical Enginrg
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