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Study of Organic Thin-Film Transistors Under Electrostatic Discharge Stresses SCIE SCOPUS

Title
Study of Organic Thin-Film Transistors Under Electrostatic Discharge Stresses
Authors
Liu, WLiou, JJKuribara, KFukuda, KSekitani, TSomeya, TChung, JJeong, YHWang, ZXLin, CL
Date Issued
2011-07
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
Low-voltage pentacene-based organic thin-film transistors (OTFTs) are characterized for the first time under the electrostatic discharge (ESD) stresses. The measurements are conducted using the transmission line pulsing (TLP) tester which generates the human body model equivalent pulses. The ESD behaviors and tolerances of OTFTs having different dimensions and gate biasing conditions are investigated. OTFT's failure mechanism and dc performance degradation due to the ESD stresses are also studied.
Keywords
Degradation; electrostatic discharge (ESD); organic thin-film transistor (OTFT)
URI
https://oasis.postech.ac.kr/handle/2014.oak/17233
DOI
10.1109/LED.2011.2142411
ISSN
0741-3106
Article Type
Article
Citation
IEEE ELECTRON DEVICE LETTERS, vol. 32, no. 7, page. 967 - 969, 2011-07
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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