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dc.contributor.author조성욱en_US
dc.date.accessioned2014-12-01T11:48:12Z-
dc.date.available2014-12-01T11:48:12Z-
dc.date.issued2012en_US
dc.identifier.otherOAK-2014-01094en_US
dc.identifier.urihttp://postech.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000001384678en_US
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/1596-
dc.descriptionMasteren_US
dc.description.abstractWe optimized back-side illuminated (BSI) CMOS image sensors (CIS) to improve optical efficiency. We used three-dimensional (3D) finite-difference time-domain (FDTD) simulation to optimize the radius of the curvature of the micro-lens and the thickness of the over-coat layer. We also used the Poynting theorem to calculate the power absorption of the photo-diode, and the transfer matrix to design the optimum structure of anti-reflection coating. Using the theory of frequency selective surface (FSS), we designed IR pass filter and IR cutoff filter possible to integrate into 3D BSI pixels. In this paper, we represented optimization methods of the BSI pixel structure and design methods of metal IR pass filter and IR cutoff filter. These results can be used to enhance optical properties of CISs and reduce the cost of the CIS module.en_US
dc.languagekoren_US
dc.publisher포항공과대학교en_US
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleOptimization of Back-Side Illuminated CMOS Image Sensorsen_US
dc.title.alternative이면-조사형 CMOS 이미지센서의 최적화en_US
dc.typeThesisen_US
dc.contributor.college일반대학원 전자전기공학과en_US
dc.date.degree2012- 8en_US
dc.contributor.department포항공과대학교en_US

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