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Cited 27 time in webofscience Cited 30 time in scopus
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Large-area graphene synthesis and its application to interface-engineered field effect transistors SCIE SCOPUS

Title
Large-area graphene synthesis and its application to interface-engineered field effect transistors
Authors
Jo, SBPark, JLee, WHCho, KHong, BH
Date Issued
2012-08
Publisher
ELSEVIER SCIENCE BV
Abstract
This article reviews recent advances in the large-area synthesis of graphene sheets and the applications of such sheets to graphene-based transistors. Graphene is potentially useful in a wide range of practical applications that could benefit from its exceptional electrical, optical, and mechanical properties. Tremendous effort has been devoted to overcoming several fundamental limitations of graphene, such as a zero band gap and a low direct current conductivity-to-optical conductivity ratio. The intrinsic properties of graphene depend on the synthetic and transfer route, and this dependence has been intensively investigated. Several representative reports describing the application of graphene as a channel and electrode material for use in flexible transparent transistor devices are discussed. A fresh perspective on the optimization of graphene as a 2D framework for crystalline organic semiconductor growth is introduced, and its effects on transistor performance are discussed. This critical review provides insights and a new perspective on the development of high-quality large-area graphene and the optimization of graphene-based transistors. (c) 2012 Elsevier Ltd. All rights reserved.
URI
https://oasis.postech.ac.kr/handle/2014.oak/15636
DOI
10.1016/J.SSC.2012.04.056
ISSN
0038-1098
Article Type
Article
Citation
SOLID STATE COMMUNICATIONS, vol. 159, no. 15, page. 1350 - 1358, 2012-08
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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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