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Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors SCIE SCOPUS

Title
Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors
Authors
Lee, SHBaek, CKPark, SKim, DWSohn, DKLEE, JEONG SOOKim, DMJeong, YH
Date Issued
2012-10
Publisher
IEEE
Abstract
The low-frequency noise in the silicon nanowire field-effect transistor (SNWFET) is characterized using SNWFETs with different channel diameters d(NW). The current density and the simulation result indicate that the volume inversion as manifested by the spatial charge distribution is enhanced in smaller d(NW). The measured noise data are discussed based on the number and correlated mobility fluctuation model. It is shown that the low-frequency noise decreases in smaller d(NW). This d(NW)-dependent noise behavior is clarified in terms of the effective oxide trap density and the fraction of inversion charges near the Si-SiO2 interface.
URI
https://oasis.postech.ac.kr/handle/2014.oak/14733
DOI
10.1109/LED.2012.2209625
ISSN
0741-3106
Article Type
Article
Citation
IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 10, page. 1348 - 1350, 2012-10
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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