Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors
SCIE
SCOPUS
- Title
- Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors
- Authors
- Lee, SH; Baek, CK; Park, S; Kim, DW; Sohn, DK; LEE, JEONG SOO; Kim, DM; Jeong, YH
- Date Issued
- 2012-10
- Publisher
- IEEE
- Abstract
- The low-frequency noise in the silicon nanowire field-effect transistor (SNWFET) is characterized using SNWFETs with different channel diameters d(NW). The current density and the simulation result indicate that the volume inversion as manifested by the spatial charge distribution is enhanced in smaller d(NW). The measured noise data are discussed based on the number and correlated mobility fluctuation model. It is shown that the low-frequency noise decreases in smaller d(NW). This d(NW)-dependent noise behavior is clarified in terms of the effective oxide trap density and the fraction of inversion charges near the Si-SiO2 interface.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14733
- DOI
- 10.1109/LED.2012.2209625
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 10, page. 1348 - 1350, 2012-10
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